insulated gate

英 [ˈɪnsjuleɪtɪd ɡeɪt] 美 [ˈɪnsəleɪtɪd ɡeɪt]

网络  绝缘栅

计算机



双语例句

  1. Silicon insulated gate fet Cable Pipe-a protection casing pipe used for special purposes when crossing roads or bridges, with good characteristics of being acidproof and alkaliproof, and good performance on electric insulation and electromagnetic shielding.
    硅绝缘栅场效应晶体管电缆管&为电缆过路、过桥专用保护套管,具有良好的耐酸碱和电气绝缘性能,电磁屏蔽性能。
  2. Investigation on serial and parallel operations of insulated gate biploar transistor Cstr Model for p-Xylene Oxidation Reactor
    绝缘栅型双极晶体管串联匀压并联匀流模拟分析对二甲苯氧化反应器连续全混流模型
  3. The prototype of UPFC ( unified power flow controller) is realized by using two identical back to back converters, in which the switch components are IPMs ( intelligent power modules) consisting of IGBTs ( insulated gate bipolar thyristors).
    文中用两个统一格式的背靠背逆变器实现了统一潮流控制器物理模型,开关元件采用绝缘栅双极型晶闸管构成的智能功率模块。
  4. A Controlled Hole Injection Lateral Insulated Gate Bipolar Transistor
    空穴注入控制型横向绝缘栅双极晶体管
  5. Gate turn of-thyristor chopper of static auxiliary system of metro No 1 is replaced by high voltage insulated gate bipolar transistor ( HVIGBT) chopper, which is presented in this article, to realize the home manufacture of static auxiliary system.
    阐述了在地铁一号线车辆静止辅助系统中采用高压绝缘栅双极型晶体管(HVIGBT)斩波器替代门极可关断晶闸管(GT0)斩波器,以实现静止辅助系统的国产化。
  6. The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.
    用IGBT(绝缘栅双极性晶体管)和功率MOSFET(金属氧化物半导体场效应管)等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。
  7. Circuit Simulation Model of the Insulated Gate Bipolar Transistor
    绝缘栅双极型晶体管的电路仿真模型
  8. Unified Description About Working Principle of Insulated Gate Field-Effect Transistor
    绝缘栅场效应管工作原理的统一表述
  9. Insulated Gate Bipolar Transistor ( IGBT) gets extensive application in the Power and Electron Technology, reasonably choose drive circuit and the safeguard measure of IGBT in the actual application, and is the key of guaranteeing the safe and reliable work of circuit.
    绝缘栅双极型晶体管(IGBT)在电力电子技术中得到广泛的应用,在实际应用中合理选用IGBT的驱动电路和保护措施,是保证电路安全可靠工作的关键。
  10. A method to simulate the characteristics of insulated gate bipolar transistor ( IGBT) with PSPICE program is proposed in this paper.
    提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
  11. This paper introduces the Insulated gate bipolar transistor ( IGBT) inverter for arc welding. The prin(?)
    介绍了采用绝缘门极双极晶体管(IGBT)作为开关元件的弧焊逆变器。
  12. Characteristics analysis and practical application of double pole transistor with insulated gate pole
    大功率绝缘门极双极晶体管的特性分析与实际应用
  13. High Power Solid Modulator with Insulated Gate Bipolar Transistor
    绝缘栅控双极晶体管大功率固态调制器
  14. By controlling the light wave-form of Xe lamp with insulated gate bipolar transistor ( IGBT) and using the periodic long-pulse chopper technology, a long pulsed medical Nd: YAG laser was designed.
    运用绝缘栅双极型晶体管(IGBT)对泵浦氙灯进行斩波放电,并采用间歇式长脉冲斩波技术,设计了一套能发射和控制长脉冲激光的Nd:YAG激光器。
  15. The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
    本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术,以及它们的应用。
  16. Research on the Insulated Gate P I N Diode Controlled Thyristor Structure
    绝缘栅控PIN二极管型晶闸管的研究
  17. This way of passivating gives better performance and greater stability of bipolar transistors and insulated gate field-effect transistors in integrated circuits.
    该项工作导致集成电路用的双极晶体管和绝缘栅场效应晶体管的性能和稳定性得到提高。
  18. Phase-shifted FB-ZVZCS-PWM converter solves the problem mentioned above, and insulated gate bipolar transistor ( IGBT) is fit for the lag-arm.
    FB-ZVZCS-PWM变换器解决了滞后臂软开关负载范围问题,滞后臂较适合用绝缘栅极双极型晶体管(IGBT)。
  19. The implementation of this method is also studied. Simulation model of IGBT ( Insulated Gate Bipolar Transistor) series resonant inverter based on MATLAB/ Simulink is established.
    以MATLAB/Simulink为仿真工具,建立了以IGBT(绝缘栅双极型晶体管)为开关器件的串联型逆变器仿真模型,对提出的定角控制方法进行了仿真验证。
  20. Insulated Gate Bipolar Transistor ( IGBT) as controllable switch, has been applied widely.
    绝缘栅双极二级管(IGBT)作为一种可控开关,获得了广泛应用。
  21. The design principle and schematic circuit of the chopped speed regulator for torpedo DC motor is introduced. The parallel connection and drive of the main circuit power component Insulated Gate Bipolar Transistor ( IGBT) are analysed, and buffer circuit and radiator are designed.
    介绍了鱼雷推进电机斩波调速装置的设计原理和电路构成,重点分析了主电路功率模块IGBT的并联与驱动,以及缓冲电路和散热装置的设计。
  22. Demonstration of Insulated Gate Bipolar Transistor ICs with Drive Protection
    绝缘栅双极晶体管驱动保护集成电路设计
  23. He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor ( SOI-LIGBT) is proposed in this paper, which can effectively raise the turn-off speed of devices, which is compatibles with integrated circuit process.
    研制出He离子注入局域寿命控制SOI横向绝缘栅双极晶体管(SOI-LIGBT),有效地提高了器件的关断速度,且与集成电路工艺相兼容。
  24. Pulse width modulation ( PWM) inverter can generate very large dv/ di in the instant of insulated gate bipolar transistor ( IGBT) high speed switching, which could produce charge-discharge current due to the parasitic capacitor.
    PWM逆变器在IGBT高速开关瞬间,会使桥臂中点对参考地形成很大的dv/di,由于寄生电容的作用,PWM逆变器会对参考地产生很大的充放电电流。
  25. Combined with the design of brushless DC electric motor controller, a method to estimate power loss of IGBT ( Insulated Gate Bipolar Transistor) based on PSPICE simulation is proposed.
    结合无刷直流电机控制器的设计,提出了基于PSPICE仿真的绝缘栅双极型晶体管IGBT(InsulatedGateBipolarTransistor)功率损耗的估算方法。
  26. The composite insulated Gate Bipolar Transistor model. Gate TurnOff Thyristor model and MOSFET Control Thyristor model are presented as examples of the composite model method, together with simulations and experimental results.
    作为应用组合模型原理的实例,文中给出了组合绝缘门根晶体管模型、组合门极可关断晶闸管模型和组合MOSFET控制晶闸管模型,并和实际器件进行比较。
  27. The high speed insulated gate bipolar transistor ( IGBT) transport model is derived by ambipolar transport theory in this paper.
    借助双极传输理论导出了高速绝缘栅双极晶体管(IGBT)传输特性的物理模型。
  28. VSC-HVDC system is a new type of HVDC technology, including voltage sourced converter ( VSC) and insulated gate bipolar transistor ( IGBT).
    VSC-HVDC系统是一种基于电压源换流器(VSC)和串联绝缘栅双极晶体管(IGBT)的新型直流输电技术。
  29. IGBT ( Insulated Gate Bipolar Transistor) is the main switch power device in the power electronics. Due to the fast switching speed and low dropout voltage, it is widely used in power electronic devices.
    IGBT(绝缘栅控双极型晶体管)是电力电子技术中的主流开关功率器件,由于开通/关断速度快、通态压降小等优点,在电力电子装置中得到广泛的应用。
  30. In recent years the Insulated Gate Bipolar Transistor ( IGBT) has been widely used in modern power electronic technology.
    近些年,绝缘栅双极型晶体管(IGBT)在现代电力电子技术中应用广泛。